High-gain and broadband SIW cavity-backed slots antenna for X-band applications

TitreHigh-gain and broadband SIW cavity-backed slots antenna for X-band applications
Publication TypeJournal Article
Year of Publication2021
AuthorsD. Khamlichi, E, Touhami, NA, Elhamadi, T, M. Ennasar, A
JournalInternational Journal of Microwave and Wireless Technologies
Volume13
Pagination1078-1085
Mots-clésAcoustic resonators, Antenna structures, Bandwidth, Directional patterns (antenna), EM simulations, Half-wave resonators, High quality factors, Manufacturing cost, Microwave antennas, Microwave circuits, Microwave field, Planar microwave circuits, Slot antennas, Substrate integrated waveguide technologies, Substrate integrated waveguides, Substrates
Abstract

Substrate-integrated waveguide (SIW) technology has recently drawn attention to its benefits in the microwave field, such as integration in planar microwave circuits, low manufacturing cost, and high-quality factor compared to other technologies. In this paper, a broadband and high gain SIW cavity-backed L-shaped slot antenna structure has been designed and made for X-band applications. Three pairs of L-shaped half-wave resonators are placed on the lower wall of the cavity (backed-slots) to further expand bandwidth and improve gain. The final antenna designed operates on a band ranging from 9.4 to 10.5 GHz with a bandwidth of 11%. Moreover, the gain reaches a value of 9.5 dBi. The final antenna is realized on a Rogers RT/Duroid 5870 substrate. The gain, the reflection coefficient, and the radiation patterns are measured and compared to the EM simulation results and a very good agreement is obtained. The proposed cavity-backed L-shaped slot antenna gives a good compromise between a high gain and a large bandwidth. Copyright © The Author(s), 2021. Published by Cambridge University Press in association with the European Microwave Association.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85100754004&doi=10.1017%2fS1759078721000015&partnerID=40&md5=f9e06e14d006d43b263d853a79e4a96f
DOI10.1017/S1759078721000015
Revues: 

Partenaires

Localisation

Suivez-nous sur

         

    

Contactez-nous

ENSIAS

Avenue Mohammed Ben Abdallah Regragui, Madinat Al Irfane, BP 713, Agdal Rabat, Maroc

  Télécopie : (+212) 5 37 68 60 78

  Secrétariat de direction : 06 61 48 10 97

        Secrétariat général : 06 61 34 09 27

        Service des affaires financières : 06 61 44 76 79

        Service des affaires estudiantines : 06 62 77 10 17 / n.mhirich@um5s.net.ma

        CEDOC ST2I : 06 66 39 75 16

        Résidences : 06 61 82 89 77

Contacts

    

    Compteur de visiteurs:635,393
    Education - This is a contributing Drupal Theme
    Design by WeebPal.