High-gain and broadband SIW cavity-backed slots antenna for X-band applications

TitreHigh-gain and broadband SIW cavity-backed slots antenna for X-band applications
Publication TypeJournal Article
Year of Publication2021
AuthorsD. Khamlichi, E, Touhami, NA, Elhamadi, T, M. Ennasar, A
JournalInternational Journal of Microwave and Wireless Technologies
Volume13
Pagination1078-1085
Mots-clésAcoustic resonators, Antenna structures, Bandwidth, Directional patterns (antenna), EM simulations, Half-wave resonators, High quality factors, Manufacturing cost, Microwave antennas, Microwave circuits, Microwave field, Planar microwave circuits, Slot antennas, Substrate integrated waveguide technologies, Substrate integrated waveguides, Substrates
Abstract

Substrate-integrated waveguide (SIW) technology has recently drawn attention to its benefits in the microwave field, such as integration in planar microwave circuits, low manufacturing cost, and high-quality factor compared to other technologies. In this paper, a broadband and high gain SIW cavity-backed L-shaped slot antenna structure has been designed and made for X-band applications. Three pairs of L-shaped half-wave resonators are placed on the lower wall of the cavity (backed-slots) to further expand bandwidth and improve gain. The final antenna designed operates on a band ranging from 9.4 to 10.5 GHz with a bandwidth of 11%. Moreover, the gain reaches a value of 9.5 dBi. The final antenna is realized on a Rogers RT/Duroid 5870 substrate. The gain, the reflection coefficient, and the radiation patterns are measured and compared to the EM simulation results and a very good agreement is obtained. The proposed cavity-backed L-shaped slot antenna gives a good compromise between a high gain and a large bandwidth. Copyright © The Author(s), 2021. Published by Cambridge University Press in association with the European Microwave Association.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85100754004&doi=10.1017%2fS1759078721000015&partnerID=40&md5=f9e06e14d006d43b263d853a79e4a96f
DOI10.1017/S1759078721000015
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